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AO7600 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO7600 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, an inverter, and for a host of other applications. Both devices are ESD protected. Standard Product AO7600 is Pb-free (meets ROHS & Sony 259 specifications). AO7600L is a Green Product ordering option. AO7600 and AO7600L are electrically identical.
SC-70-6 (SOT-323) Top View S1 G1 D2 D1 G2 S2
Features
n-channel VDS (V) = 20V ID = 0.9A (VGS=4.5V) p-channel -20V -0.6A (VGS=-4.5V)
RDS(ON) RDS(ON) < 300m (VGS=4.5V) < 550m (VGS=-4.5V) < 350m (VGS=2.5V) < 700m (VGS=-2.5V) < 450m (VGS=1.8V) < 950m (VGS=-1.8V)
D1
D2
G S1
G S2
n-channel
p-channel
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Max p-channel -20 8 -0.6 -0.48 -3 0.3 0.19 -55 to 150
Units V V A
VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
8 0.9 0.7 5 0.3 0.19 -55 to 150
W C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C
Symbol RJA RJL RJA RJL
Device n-ch n-ch n-ch p-ch p-ch p-ch
Typ 360 400 300 360 400 300
Max Units 415 C/W 460 C/W 350 C/W 415 460 350 C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO7600
N-Channel: Electrical Characteristics (T =25C unless otherwise noted) J Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=0.9A TJ=125C 0.5 5 181 253 237 317 2.6 0.69 300 330 350 450 1 0.4 101 17 14 3 1.57 0.13 0.36 3.2 4 15.5 2.4 6.7 1.6 8.1 120 0.75 Min 20 1 5 25 0.9 Typ Max Units V A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
gFS VSD IS
VGS=2.5V, ID=0.75A VGS=1.8V, ID=0.7A VDS=5V, ID=0.8A Forward Transconductance Diode Forward Voltage IS=0.5A,VGS=0V Maximum Body-Diode Continuous Current
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
4 1.9
VGS=4.5V, VDS=10V, ID=0.8A
VGS=5V, VDS=10V, RL=12.5, RGEN=6 IF=0.8A, dI/dt=100A/s
2
Body Diode Reverse Recovery Charge IF=0.8A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO7600
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 4V ID (A) ID(A) 6 4 2 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 480 Normalized On-Resistance 440 400 RDS(ON) (m) 360 320 280 240 200 160 0 1 2 3 4 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 500 460 420 RDS(ON) (m) 380 IS (A) 340 300 260 220 180 140 1 2 3 4 5 6 7 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-05 0.0 0.4 0.8 1.2 1.6 2.0 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C ID=0.9A 1E-01 1E-02 25C 1E-03 1E-04 1E+01 1E+00 125C VGS=2.5V VGS=1.8V 1.8 VGS=1.8V 1.6 1.4 VGS=4.5V 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID=0.9A VGS=2.5V ID=0.75A I 0 7A 3.5V 3V 2.5V VGS=2V 1 4 10V 8V 5V 3 VDS=5V 25C 125C 2
0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics
VGS=4.5V
Alpha & Omega Semiconductor, Ltd.
AO7600
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=0.9A Capacitance (pF) 200
150
Ciss
100 Coss 50 Crss
0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics
10.0
TJ(Max)=150C, TA=25C RDS(ON) limited 10ms 0.1s 100s 1ms Power (W) 10s
16
TJ(Max)=150C TA=25C
ID (Amps)
1.0
12
8
0.1
1s 10s DC
4
0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=415C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO7600
P-Channel Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, V DS=-5V VGS=-4.5V, I D=-0.6A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, I D=-0.5A VGS=-1.8V, I D=-0.4A gFS VSD IS Forward Transconductance VDS=-5V, ID=-0.6A Diode Forward Voltage IS=-0.5A,VGS=0V Maximum Body-Diode Continuous Current -0.5 -3 415 542 590 700 1.7 -0.86 -1 -0.4 114 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 17 14 12 1.44 VGS=-4.5V, V DS=-10V, I D=-0.6A 0.14 0.35 6.5 VGS=-4.5V, V DS=-10V, RL=16.7, RGEN=3 IF=-0.6A, dI/dt=100A/s IF=-0.6A, dI/dt=100A/s 6.5 18.2 5.5 10 3 13 17 1.8 140 550 700 700 950 -0.6 Min -20 -1 -5 10 -0.9 Typ Max Units V A A V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the 10s thermal resistance rating. given application depends on the user's specific board design. The current rating is based on the t t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : July 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO7600
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6 -10V -6V -4.5V -4V 4 -ID (A) -3V 2 -2.5V VGS=-2.0V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 900 Normalized On-Resistance VGS=-1.8V 800 RDS(ON) (m) 700 600 500 400 300 0 1 2 3 4 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 900 800 700 600 500 400 300 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C -IS (A) ID=-0.6A 1.0E+00 1.0E-01 125C 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.4 0.8 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics RDS(ON) (m) VGS=-4.5V 1.6 1 -3.5V -ID(A) 2 3 125C 4 25C VDS=-5V
0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 2: Transfer Characteristics
VGS=-1.8V ID=-0.4A
1.4
VGS=-2.5V ID=-0.5A
VGS=-2.5V
1.2 VGS=-4.5V ID=-0.6A 1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
AO7600
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0.0 0.5 1.0 1.5 2.0 -Qg (nC) Figure 7: Gate-Charge Characteristics 200 VDS=-10V ID=-0.6A Capacitance (pF) 150 Ciss
100 Coss 50 Crss
0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics
10.00
TJ(Max)=150C, TA=25C RDS(ON) limited 1ms 10ms 0.1s 1s 10s DC
14 10s 100s Power (W) 12 10 8 6 4 2 TJ(Max)=150C TA=25C
1.00 -ID (Amps)
0.10
0.01
0.00 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=415C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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